BSZ100N03MSGATMA1

INFINEON  BSZ100N03MSGATMA1  晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0091 ohm, 10 V, 2 V 新

表面贴装型 N 通道 30 V 10A（Ta），40A（Tc） 2.1W（Ta），30W（Tc） PG-TSDSON-8

得捷:
MOSFET N-CH 30V 10A/40A 8TSDSON

立创商城:
N沟道 30V 40A 10A

e络盟:
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0091 ohm, 10 V, 2 V

艾睿:
Make an effective common source amplifier using this BSZ100N03MSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ100N03MSGATMA1  MOSFET, N-CH, 30V, 40A, PG-TSDSON-8 New

Win Source:
MOSFET N-CH 30V 40A TDSON-8