FDS6910

FAIRCHILD SEMICONDUCTOR  FDS6910  双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V

The is a dual N-channel logic level MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

.

Fast switching speed

.

Low gate charge

.

High performance Trench technology for extremely low RDS ON

.

High power and current handling capability

.

±20V Gate to source voltage

.

7.5A Continuous drain current

.

20A Pulsed drain current