MW6S004NT1

NXP  MW6S004NT1  RF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL 新

Overview

The is designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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## Features

* Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP

Power Gain: 18 dB

Drain Efficiency: 33%

IMD: –34 dBc

* Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP

Power Gain: 19 dB

IMD: –39 dBc

* Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power

* Characterized with Series Equivalent Large–Signal Impedance Parameters

* On-Chip RF Feedback for Broadband Stability

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

## Features