SMBT3904UPNE6327HTSA1

Infineon SMBT3904UPNE6327HTSA1, 双 NPN + PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250（最小）MHz, 6引脚

双 NPN/PNP ，

得捷:
TRANS NPN/PNP 40V 0.2A SC74-6

欧时:
Infineon SMBT3904UPNE6327HTSA1, 双 NPN + PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250（最小）MHz, 6引脚

艾睿:
This specially engineered npn and PNP SMBT3904UPNE6327HTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN/PNP 40V 0.2A 6-Pin SC74 T/R