MKI50-12F7

Trans IGBT Module N-CH 1200V 65A 350000mW 12Pin

Even with large currents this infineon IGBT module from Ixys Corporation will work in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 350000 mW. It is made in a quad configuration. This IGBT driver board has an operating temperature range of -40 °C to 125 °C.

得捷:
IGBT MODULE 1200V 65A 350W E2

艾睿:
Trans IGBT Module N-CH 1.2KV 65A 12-Pin