单晶体管, IGBT, 80 A, 1.65 V, 429 W, 1.35 kV, TO-247, 3 引脚
The IGBT transistor from Technologies is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1350 V. Its maximum power dissipation is 429000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IHW40N135R3FKSA1 | Infineon 英飞凌 | 下载 |
| IHW40T60FKSA1 | Infineon 英飞凌 | 下载 |
| IHW40T120FKSA1 | Infineon 英飞凌 | 下载 |
| IHW40T60 | Infineon 英飞凌 | 下载 |
| IHW40N120R3 | Infineon 英飞凌 | 下载 |
| IHW40N60R | Infineon 英飞凌 | 下载 |
| IHW40N60RF | Infineon 英飞凌 | 下载 |
| IHW40T120 | Infineon 英飞凌 | 下载 |
| IHW40N120R3FKSA1 | Infineon 英飞凌 | 下载 |
| IHW40N60RFFKSA1 | Infineon 英飞凌 | 下载 |
| IHW40N65R5 | Infineon 英飞凌 | 下载 |