FDN5618P

FAIRCHILD SEMICONDUCTOR  FDN5618P  晶体管, MOSFET, P沟道, -1.25 A, -60 V, 170 mohm, -10 V, 20 V

The from is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.

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High performance trench technology for extremely low RdsON

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Drain to source voltage Vds of -60V

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Gate to source voltage of ±20V

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Continuous drain current Id of -1.25A

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Power dissipation pd of 500mW

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Low on state resistance of 185mohm at Vgs -4.5V

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Operating junction temperature range from -55°C to 150°C