BCW61CE6327HTSA1

Infineon BCW61CE6327HTSA1 , PNP 双极晶体管, 100 mA, Vce=32 V, HFE:380, 250 MHz, 3引脚 SOT-23封装

通用 PNP ，

得捷:
TRANS PNP 32V 0.1A SOT23

欧时:
Infineon BCW61CE6327HTSA1 , PNP 双极晶体管, 100 mA, Vce=32 V, HFE:380, 250 MHz, 3引脚 SOT-23封装

艾睿:
Jump-start your electronic circuit design with this versatile PNP BCW61CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Verical:
Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 32V 0.1A SOT-23