SIR414DP-T1-GE3

SIR414DP-T1-GE3概述

VISHAY  SIR414DP-T1-GE3  晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V

The is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification and secondary side DC-to-DC applications.

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100% Rg tested
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100% UIS tested
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Halogen-free
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-55 to 150°C Operating temperature range
SIR414DP-T1-GE3数据文档
型号 品牌 下载
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