FCPF190N60

FAIRCHILD SEMICONDUCTOR  FCPF190N60  功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V

The is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes advanced charge-balance technology for outstandingly low ON-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dV/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

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Ultra low gate charge Qg = 57nC

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Low effective output capacitance Coss.eff = 160pF

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100% avalanche tested