STPSC8TH13TI

STMICROELECTRONICS  STPSC8TH13TI  二极管, 碳化硅肖特基, SIC, 650V系列, 双系列, 650 V, 8 A, 23.5 nC, TO-220AB

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

**Key Features**

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No or negligible reverse recovery

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Switching behavior independent of temperature

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Suited for specific bridge-less topologies

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High forward surge capability

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Insulated package:

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Capacitance: 7 pF

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Insulated voltage: 2500 V rms