N-Channel Silicon Junction Field-Effect Transistor
• Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA= 25°C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
Storage Temperature Range – 65°C to 200°C
贸泽:
JFET N-Ch -20Vgss -0.35V 10mA 300mW 2.4mW