FDC6320C

FAIRCHILD SEMICONDUCTOR  FDC6320C  双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

The is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.

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Very low level gate drive requirements allowing direct operation in 3V circuits

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Gate-source Zener for ESD ruggedness