SPB21N50C3ATMA1

INFINEON  SPB21N50C3ATMA1  晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V

表面贴装型 N 通道 21A（Tc） 208W（Tc） PG-TO263-3-2

得捷:
MOSFET N-CH 560V 21A TO263-3

立创商城:
N沟道 560V 21A

贸泽:
MOSFET HIGH POWER_LEGACY

e络盟:
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V

艾睿:
Increase the current or voltage in your circuit with this SPB21N50C3ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology.

Verical:
Trans MOSFET N-CH 500V 21A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  SPB21N50C3ATMA1  MOSFET Transistor, N Channel, 21 A, 500 V, 0.16 ohm, 10 V, 3 V