分立半导体模块 150 Amps 600V
IGBT 模块 NPT 三相反相器 600 V 170 A 515 W 底座安装 E3
得捷:
IGBT MODULE 600V 170A 515W E3
贸泽:
分立半导体模块 150 Amps 600V
艾睿:
The MWI150-06A8 infineon IGBT module from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 515000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MWI150-06A8 | IXYS Semiconductor | 下载 |
| MWI100-12E8 | IXYS Semiconductor | 下载 |
| MWI15-12A7 | IXYS Semiconductor | 下载 |
| MWI100-12A8 | IXYS Semiconductor | 下载 |
| MWI100-06A8 | IXYS Semiconductor | 下载 |
| MWI150-12T8T | IXYS Semiconductor | 下载 |
| MWI100-12T8T | IXYS Semiconductor | 下载 |
| MWI15-12A6K | IXYS Semiconductor | 下载 |
| MWI150-06A8T | IXYS Semiconductor | 下载 |