VISHAY SIR470DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
The is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for secondary side synchronous rectification and power supply applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIR470DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR408DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR426DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR472DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR496DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR468DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR462DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR422DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR466DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR460DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR416DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |