STI6N80K5

STI6N80K5概述

N沟道 800V 4.5A

通孔 N 通道 4.5A(Tc) 85W(Tc) I2PAK(TO-262)


立创商城:
N沟道 800V 4.5A


得捷:
MOSFET N-CH 800V 4.5A I2PAK


艾睿:
This STI6N80K5 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 800V 4.5A 3-Pin I2PAK Tube


Chip1Stop:
Trans MOSFET N-CH 800V 4.5A 3-Pin3+Tab I2PAK Tube


Verical:
Trans MOSFET N-CH 800V 4.5A 3-Pin3+Tab I2PAK Tube


STI6N80K5数据文档
型号 品牌 下载
STI6N80K5

ST Microelectronics 意法半导体

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STI6N62K3

ST Microelectronics 意法半导体

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STI6N90K5

ST Microelectronics 意法半导体

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