SIHB12N50E-GE3

SIHB12N50E-GE3概述

VISHAY  SIHB12N50E-GE3  晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V

The is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.

.
Low figure-of-merit FOM Ron x Qg
.
Low input capacitance CISS
.
Reduced switching
.
Reduced conduction losses
.
Low gate charge Qg
.
Avalanche energy rated UIS
.
Halogen-free
SIHB12N50E-GE3数据文档
型号 品牌 下载
SIHB12N50E-GE3

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