IXFH12N100

IXFH12N100概述

IXYS SEMICONDUCTOR  IXFH12N100  功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V

The is a 1000V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode HiPerFET™ and low RDS on HDMOS™ process. The IXYS most popular power MOSFET HiPerFET™ is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.

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Rugged polysilicon gate cell structure
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Unclamped Inductive Switching UIS rated
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Low inductance offers easy to drive and protect
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Fast intrinsic rectifier
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Space-saving s
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High power density
IXFH12N100数据文档
型号 品牌 下载
IXFH12N100

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IXFH13N50

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IXFH26N55Q

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IXFH67N10

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IXFH30N40Q

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IXFH80N08

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IXFH13N80Q

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IXFH15N60

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IXFH22N55

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