TAIWAN SEMICONDUCTOR TSM7N65CI 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1 ohm, 10 V, 2 V
The is a 650V N-channel enhancement-mode Power MOSFET produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
型号 | 品牌 | 下载 |
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TSM7N65CI | Taiwan Semiconductor 台湾半导体 | 下载 |
TSM7N90CI C0G | Taiwan Semiconductor 台湾半导体 | 下载 |
TSM70N380CI C0G | Taiwan Semiconductor 台湾半导体 | 下载 |
TSM70N380CI | Taiwan Semiconductor 台湾半导体 | 下载 |
TSM70N10CP ROG | Taiwan Semiconductor 台湾半导体 | 下载 |
TSM70N600CI C0G | Taiwan Semiconductor 台湾半导体 | 下载 |