IHW50N65R5XKSA1

IHW50N65R5XKSA1概述

单晶体管, IGBT, 80 A, 1.35 V, 282 W, 650 V, TO-247, 3 引脚

Description:

combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well.

Summary of Features:

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Lowest V CEsat and optimized E off for loss reduction up to 30% compared to previous generation
.
650V blocking voltage
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Hard switching capable

Benefits:

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Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability
.
50V higher voltage possible for increased reliability
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Performs well in designs with higher switching frequencies up to 40kHz
IHW50N65R5XKSA1数据文档
型号 品牌 下载
IHW50N65R5XKSA1

Infineon 英飞凌

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IHW50N65R5

Infineon 英飞凌

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