BFS17NTA

BFS17NTA概述

BFS17N 系列 11 V 50 mA NPN 表面贴装 晶体管 - SOT-23-3

Compared to other transistors, the RF bi-polar junction transistor, developed by Zetex, can properly function in the event of high radio frequency power situations. This product"s minimum DC current gain is 56@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.5@5mA@25mA V. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

BFS17NTA数据文档
型号 品牌 下载
BFS17NTA

Diodes 美台

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BFS17A,215

NXP 恩智浦

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BFS17A,235

NXP 恩智浦

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BFS17HTC

Vishay Semiconductor 威世

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BFS17W,135

NXP 恩智浦

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BFS17,235

NXP 恩智浦

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BFS17WH6327XTSA1

Infineon 英飞凌

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BFS17PE6327HTSA1

Infineon 英飞凌

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BFS19,235

NXP 恩智浦

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BFS17SH6327XTSA1

Infineon 英飞凌

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BFS17A

NXP 恩智浦

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