LYONTEK LY62W51216ML-55LLI 芯片, 存储器, SRAM, 8M, 512KX16, 2.7-5.5V, 44TSOPII
The is a 512K x 16-bit low power CMOS static random access memory organized as 524288 words by 8-bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. Designed for very low power system applications and particularly well suited for battery back-up non-volatile memory application.
型号 | 品牌 | 下载 |
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LY62W51216ML-55LLI | Lyontek | 下载 |
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