S29GL128S10FAIV23

S29GL128S10FAIV23概述

IC FLASH MEM 128Mbit PAGE 64BGA

FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100ns 64-FBGA 13x11


立创商城:
S29GL128S10FAIV23


贸泽:
Flash Memory Nor


艾睿:
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 100ns 64-Pin Fortified BGA T/R


安富利:
The Spansion® S29GL128S is MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.


Win Source:
IC FLASH 128MBIT PARALLEL 64FBGA / FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100 ns 64-FBGA 13x11


S29GL128S10FAIV23数据文档
型号 品牌 下载
S29GL128S10FAIV23

Cypress Semiconductor 赛普拉斯

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S29GL128P10TFI010

Spansion 飞索半导体

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S29GL256P10TFI01

Spansion 飞索半导体

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S29GL128S90TFI010

Spansion 飞索半导体

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S29GL032N90TFI040

Spansion 飞索半导体

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S29GL128S11TFIV20

Spansion 飞索半导体

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S29GL032N90TFI030

Spansion 飞索半导体

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S29GL128S90TFI020

Spansion 飞索半导体

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S29GL032N90TFI010

Spansion 飞索半导体

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S29GL032N90FFI020

Spansion 飞索半导体

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S29GL128S10TFI010

Spansion 飞索半导体

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