STGB6NC60HD 系列 600 V 15 A N 沟道 极快速 PowerMESH IGBT - D2PAK
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB6NC60HDT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NB40LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB41LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB37LZT4 | ST Microelectronics 意法半导体 | 下载 |