迅雷高速NPT IGBT与反并联二极管DQ Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
型号 | 品牌 | 下载 |
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APT30GS60BRDQ2G | Microsemi 美高森美 | 下载 |
APT30GT60KRG | Microsemi 美高森美 | 下载 |
APT30DQ60KG | Microsemi 美高森美 | 下载 |
APT30DQ100KG | Microsemi 美高森美 | 下载 |
APT30D60BG | Microsemi 美高森美 | 下载 |
APT30DQ60BG | Microsemi 美高森美 | 下载 |
APT30DQ120KG | Microsemi 美高森美 | 下载 |
APT30DQ100BG | Microsemi 美高森美 | 下载 |
APT30D40B | Microsemi 美高森美 | 下载 |
APT30S20BCTG | Microsemi 美高森美 | 下载 |
APT30S20BG | Microsemi 美高森美 | 下载 |