MMRF1006HR5数据手册PDF_MMRF1006HR5中文资料-锐单商城

MMRF1006HR5概述

射频金属氧化物半导体场效应RF MOSFET晶体管 MOSFET 10-500 MHz 1000 W 50 V

RF Mosfet LDMOS 50V 150mA 450MHz 20dB 1000W NI-1230-4H

得捷:
RF MOSFET LDMOS 50V NI-1230

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 MOSFET 10-500 MHz 1000 W 50 V

艾睿:
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R

安富利:
Trans MOSFET N-CH 110V 4-Pin NI-1230H T/R

Verical:
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R

RfMW:
RF Power Transistor,10 to 500 MHz, 1000 W, Typ Gain in dB is 20 @ 450 MHz, 50 V, LDMOS, SOT1787

MMRF1006HR5数据文档