K4E660412E-JP50

K4E660412E-JP50概述

16M x 4Bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle4K Ref. or 8K Ref., access time -45, -50 or -60, power consumptionNor mal or Low power are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

\- K4E660412E-JI/P3.3V, 8K Ref., SOJ

\- K4E640412E-JI/P3.3V, 4K Ref., SOJ

\- K4E660412E-TI/P3.3V, 8K Ref., TSOP

\- K4E640412E-TI/P3.3V, 4K Ref., TSOP

K4E660412E-JP50数据文档
型号 品牌 下载
K4E660412E-JP50

Samsung 三星

下载
K4E640412E-TP45

Samsung 三星

下载
K4E640412E-TI60

Samsung 三星

下载
K4E640412E-JI45

Samsung 三星

下载
K4E640412E-JP60

Samsung 三星

下载
K4E640412E-JP50

Samsung 三星

下载
K4E6E304EB-EGCF

Samsung 三星

下载

锐单商城 - 一站式电子元器件采购平台