Trans GP BJT PNP 60V 0.6A 4Pin UA
This PNP general purpose bipolar junction transistor from s is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANS2N2907AUA | Semicoa Semiconductor | 下载 |
| JANS1N5283-1 | Microsemi 美高森美 | 下载 |
| JANS1N5283UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5287UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5288UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5289UR-1 | Microsemi 美高森美 | 下载 |
| JANS2N3700UB | Microsemi 美高森美 | 下载 |
| JANS2N2222A | Semicoa Semiconductor | 下载 |
| JANS1N5619 | Microsemi 美高森美 | 下载 |
| JANS1N5618 | Microsemi 美高森美 | 下载 |
| JANS2N2219A | Semicoa Semiconductor | 下载 |