PTFB211503ELV1R0XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管

Summary of Features:

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Broadband internal matching

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Enhanced for use in DPD error correction systems

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Typical two-carrier WCDMA performance at 2170 MHz, 30 V,

\- Average output power = 32 W

\- Linear Gain = 18 dB

\- Efficiency = 29%

\- Intermodulation distortion = –34 dBc

\- Adjacent channel power = –37 dBc

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Typical CW performance, 2170 MHz, 30 V

\- Output power at P1dB = 150 W

\- Efficiency = 55%

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Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers

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Integrated ESD protection

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Capable of handling 10:1 VSWR @ 30 V, 150 W CW output power

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Pb-Free and RoHS compliant

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Package: H-33288-6, bolt-down