TO-236AB N-CH 30V 4.7A
表面贴装型 N 通道 4.7A（Tc） 280mW（Tj） TO-236AB（SOT23）
得捷:
MOSFET N-CH 30V 4.7A TO236AB
艾睿:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R
Chip1Stop:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R
Verical:
Trans MOSFET N-CH 30V 4.7A 3-Pin SOT-23 T/R
Newark:
The PMV60EN,215 is a 30V logic level N-channel enhancement mode Field Effect Transistor designed and qualified for use in computing, communications, consumer and industrial applications. This TrenchMOS™ transistor is suitable for high frequency applications due to fast switching characteristics.
Win Source:
MOSFET N-CH 30V 4.7A SOT-23
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|---|---|---|
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