IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2CH
AUTOMOTIVE GRADE
Features
• Low VCE on Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for ILM ①
• Positive VCE on Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive QualifiedBenefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
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