2SC6017-TL-E 编带
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 950 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2SC6017-TL-E | ON Semiconductor 安森美 | 下载 |
| 2SC6024-TL-E | Sanyo Semiconductor 三洋 | 下载 |
| 2SC6095-TD-E | ON Semiconductor 安森美 | 下载 |
| 2SC6096-TD-E | ON Semiconductor 安森美 | 下载 |
| 2SC6099-E | ON Semiconductor 安森美 | 下载 |
| 2SC6043-AE | ON Semiconductor 安森美 | 下载 |
| 2SC6096-TD-H | ON Semiconductor 安森美 | 下载 |
| 2SC6099-TL-E | ON Semiconductor 安森美 | 下载 |
| 2SC6043 | ON Semiconductor 安森美 | 下载 |
| 2SC6097-TL-E | ON Semiconductor 安森美 | 下载 |
| 2SC6144SG | ON Semiconductor 安森美 | 下载 |