STP10NK60Z

STMICROELECTRONICS  STP10NK60Z  功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STP10NK60Z, 10 A, Vds=600 V, 3引脚 TO-220封装

得捷:
MOSFET N-CH 600V 10A TO220AB

立创商城:
STP10NK60Z

艾睿:
Make an effective common source amplifier using this STP10NK60Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 115000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology.

安富利:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-220 Tube

富昌:
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220

Chip1Stop:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-220 Tube

TME:
Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3

Verical:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-220AB Tube

Newark:
Power MOSFET, N Channel, 10 A, 600 V, 750 mohm, 10 V, 3.75 V

儒卓力:
**N-CH 600V 10A 750mOhm TO220-3 **

Win Source:
MOSFET N-CH 600V 10A TO-220