JANTX2N6352

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is military qualified up to the JANTXV level.

艾睿:
Are traditional transistors not providing enough of a current gain? The NPN JANTX2N6352 Darlington transistor from Microsemi can help. This Darlington transistor array&s;s maximum emitter base voltage is 12 V. This product&s;s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 2000@1A@5 V|2000@5A@5V|400@10A@5V. It has a maximum collector emitter saturation voltage of 1.5@5mA@5A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 12 V.

Chip1Stop:
Trans Darlington NPN 80V 5A 4-Pin3+Tab TO-213AA

Verical:
Trans Darlington NPN 80V 5A 2000mW 4-Pin3+Tab TO-66 Tray