IXDH20N120

Trans IGBT Chip N-CH 1200V 38A 200000mW 3Pin3+Tab TO-247AD

Use the IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1200V 38A 200W TO247AD

艾睿:
Trans IGBT Chip N-CH 1.2KV 38A 3-Pin3+Tab TO-247AD

富昌:
1200V,20A IGBT NPT, TO-247AD 3