Trans RF MOSFET N-CH 40V 2A 3Pin PowerSO-10RF Formed lead Tube
Do you need a transistor that will operate at high frequencies? Then this RF amplifier from STMicroelectronics is perfect for you! Its maximum power dissipation is 36500 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85006-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |