IS61C6416AL-12TI

静态随机存取存储器 1Mb 64Kx16 12ns 5v Async 静态随机存取存储器

DESCRIPTION

The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. They are fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

FEATURES

IS61C6416AL and IS64C6416AL

   • High-speed access time: 12 ns, 15ns

   • Low Active Power: 175 mW typical

   • Low Standby Power: 1 mW typical CMOS standby

IS62C6416AL and IS65C6416AL

   • High-speed access time: 35 ns, 45ns

   • Low Active Power: 50 mW typical

   • Low Standby Power: 100 µW typical CMOS standby

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh required

• Available in 44-pin SOJ package and 44-pin TSOP Type II

• Commercial, Industrial and Automotive temperature ranges available

• Lead-free available