VISHAY SIR890DP-T1-GE3 晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for low-side device in synchronous buck DC-to-DC converter applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIR890DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR836DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR802DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR862DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR872ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR876ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR800DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR870ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR880ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR878DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR882DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |