AFT27S012NT1

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V

Overview

The 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

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## Features

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Universal broadband driven device with internal RF feedback

* RoHS compliant

## Features RF Performance Table

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.1

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 20.8| 22.0| 9.8| –41.1| –9

2140 MHz| 20.9| 22.6| 9.6| –40.7| –10

2170 MHz| 20.9| 22.8| 9.4| –40.8| –10

2200 MHz| 20.8| 22.9| 9.3| –40.4| –9

1\\. All data measured in fixture with device soldered to heatsink.