Trans GP BJT NPN 400V 0.2A 600mW 3Pin NP
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| 2SC4944-YTE85L,F | Toshiba 东芝 | 下载 |
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