Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin3+Tab TO-247 Tube
You can use this IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
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