IXFK180N10

IXFK180N10概述

Trans MOSFET N-CH 100V 180A 3Pin3+Tab TO-264AA

N-Channel 100V 180A Tc 560W Tc Through Hole TO-264AA IXFK


得捷:
MOSFET N-CH 100V 180A TO264AA


艾睿:
Create an effective common drain amplifier using this IXFK180N10 power MOSFET from Ixys Corporation. Its maximum power dissipation is 560000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


DeviceMart:
MOSFET N-CH 100V 180A TO-264AA


IXFK180N10数据文档
型号 品牌 下载
IXFK180N10

IXYS Semiconductor

下载
IXFK74N50P2

IXYS Semiconductor

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IXFK44N50

IXYS Semiconductor

下载
IXFK48N55

IXYS Semiconductor

下载
IXFK260N17T

IXYS Semiconductor

下载
IXFK140N30P

IXYS Semiconductor

下载
IXFK44N80P

IXYS Semiconductor

下载
IXFK30N100Q2

IXYS Semiconductor

下载
IXFK150N30P3

IXYS Semiconductor

下载
IXFK32N80P

IXYS Semiconductor

下载
IXFK48N50

IXYS Semiconductor

下载

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