CSD23203WT

TEXAS INSTRUMENTS  CSD23203WT  晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV

P 通道 NexFET™ 功率 MOSFET，Texas Instruments

### MOSFET ，Texas Instruments

得捷:
MOSFET P-CH 8V 3A 6DSBGA

立创商城:
CSD23203WT

德州仪器TI:
-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

欧时:
### P 通道 NexFET™ 功率 MOSFET，Texas Instruments### MOSFET 晶体管，Texas Instruments

e络盟:
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV

艾睿:
Compared to traditional transistors, CSD23203WT power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with nexfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET P-CH 8V 3A 6-Pin DSBGA T/R

Verical:
Trans MOSFET P-CH 8V 3A 6-Pin DSBGA T/R