高级 LinCMOSTM 低噪声精密二路运算放大器
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
型号 | 品牌 | 下载 |
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TLC2202A | TI 德州仪器 | 下载 |
TLC27L4C | TI 德州仪器 | 下载 |
TLC2543CDW | TI 德州仪器 | 下载 |
TLC2543IN | TI 德州仪器 | 下载 |
TLC2543CFNG3 | TI 德州仪器 | 下载 |
TLC272ACPE4 | TI 德州仪器 | 下载 |
TLC272CDR | TI 德州仪器 | 下载 |
TLC2272AIDR | TI 德州仪器 | 下载 |
TLC272CPSR | TI 德州仪器 | 下载 |
TLC2272CPWR | TI 德州仪器 | 下载 |
TLC272BCPE4 | TI 德州仪器 | 下载 |