IRF2805LPBF

IRF2805LPBF概述

Trans MOSFET N-CH 55V 135A 3Pin3+Tab TO-262

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Typical Applications

Climate Control

ABS

Electronic Braking

Windshield Wipers

Lead-Free

IRF2805LPBF数据文档
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