EMG8 NPN+NPN复合带阻尼三极管 50V 100mA 150mW/0.15W R1=4.7KΩ R2=47KΩ SOT-553/EMT5 标记G8 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO Q1/Q2 | 50V/50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO Q1/Q2 | 50V/50V 集电极连续输出电流IC Collector CurrentIC Q1/Q2 | 100mA/100MA Q1基极输入电阻R1 Input ResistanceR1 | 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 0.1 Q2基极输入电阻R1 Input ResistanceR1 | 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 0.1 直流电流增益hFE DC Current GainhFEQ1/Q2 | 截止频率fT Transtion FrequencyfT Q1/Q2 | 250MHz/250MHZ 耗散功率Pc Power Dissipation Q1/Q2 | 150mW/0.15W Description & Applications | Features •Emitter common dual digital transistors •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half 描述与应用 | Features •Emitter common dual digital transistors •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half