分立半导体模块 30 Amps 1200V
IGBT 模块 NPT 三相反相器，带制动器 底座安装 E1
得捷:
IGBT MODULE 1200V 30A 130W E1
贸泽:
分立半导体模块 30 Amps 1200V
艾睿:
Use the MUBW30-12A6K infineon IGBT module from Ixys Corporation when working with an electronic switch. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 125 °C. It is made in a hex configuration.
Verical:
Trans IGBT Module N-CH 1200V 30A 130000mW 25-Pin
| 型号 | 品牌 | 下载 |
|---|---|---|
| MUBW30-12A6K | IXYS Semiconductor | 下载 |
| MUBW35-06A6 | IXYS Semiconductor | 下载 |
| MUBW30-12E6K | IXYS Semiconductor | 下载 |
| MUBW35-12E7 | IXYS Semiconductor | 下载 |
| MUBW15-06A6 | IXYS Semiconductor | 下载 |
| MUBW10-06A6 | IXYS Semiconductor | 下载 |
| MUBW50-12E8 | IXYS Semiconductor | 下载 |
| MUBW15-12A6 | IXYS Semiconductor | 下载 |
| MUBW25-06A6 | IXYS Semiconductor | 下载 |
| MUBW30-12A6 | IXYS Semiconductor | 下载 |
| MUBW75-12T8 | IXYS Semiconductor | 下载 |