AO7405

P沟道增强型场效应晶体管概述AO7405采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V，小SOT363足迹。它可以被用来为各种各样的应用，包括负载开关，低电流逆变器和低电流的..

最大源漏极电压VdsDrain-Source Voltage| -30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -1.6A 源漏极导通电阻RdsDrain-Source On-State Resistance| 190mΩ@ VGS = -2.5V,ID = -1A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6~-1.4V 耗散功率PdPower Dissipation| 625mW/0.625W Description & Applications| P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent RDSON, low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7405 is Pb-free meets ROHS & Sony 259 specifications. AO7405L is a Green Product ordering option. AO7405 and AO7405L are electrically identical. 描述与应用| P沟道增强型场效应 概述 AO7405采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V，小SOT363足迹。它可以被用来为各种各样的应用，包括负载开关，低电流逆变器和低电流的DC-DC转换器。标准产品AO7405是无铅（符合ROHS＆索尼259规格）。 AO7405L是一种绿色产品订购选项。 AO7405和AO7405L是电动相同。