IXFN200N07

IXYS SEMICONDUCTOR  IXFN200N07  晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V

The is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode HiPerFET™. It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.

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International standard packages

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MiniBLOC with aluminium nitride isolation

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Rugged polysilicon gate cell structure

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Unclamped inductive switching UIS rating

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Low package inductance

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Easy to mount

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Space saving